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Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors
The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of ZnO, which contributed to the increase in drain curr...
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| 出版年: | Nanomaterials (Basel) |
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| 主要な著者: | , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2020
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7353260/ https://ncbi.nlm.nih.gov/pubmed/32570877 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10061186 |
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