Reversible switching mode change in Ta(2)O(5)-based resistive switching memory (ReRAM)

We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxyg...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Sci Rep
Egile Nagusiak: Kim, Taeyoon, Son, Heerak, Kim, Inho, Kim, Jaewook, Lee, Suyoun, Park, Jong Keuk, Kwak, Joon Young, Park, Jongkil, Jeong, YeonJoo
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Nature Publishing Group UK 2020
Gaiak:
Article
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC7347604/
https://ncbi.nlm.nih.gov/pubmed/32647262
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-68211-y
Etiketak: Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!

Antzeko izenburuak