A triple-level cell charge trap flash memory device with CVD-grown MoS2

This study investigates the triple-level cell (TLC) memory retention of a MoS2-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-κ gate dielectric is found to have a high coupling ratio, which enhances the tunneling efficiency for programming. The fabricated devices sh...

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Main Authors: Minkyung Kim, Eunpyo Park, Jongkil Park, Jaewook Kim, YeonJoo Jeong, Suyoun Lee, Inho Kim, Jong-Keuk Park, Sung-Yun Park, Joon Young Kwak
Formáid: Artigo
Teanga:Inglês
Foilsithe: Elsevier 2022-07-01
Sraith:Results in Physics
Ábhair:
MoS2
Charge trap flash
Triple-level cell
Rochtain Ar Líne:http://www.sciencedirect.com/science/article/pii/S2211379722003321
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