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A triple-level cell charge trap flash memory device with CVD-grown MoS2
This study investigates the triple-level cell (TLC) memory retention of a MoS2-channel based charge trap flash (CTF) device. A top-gated CTF device with a high-κ gate dielectric is found to have a high coupling ratio, which enhances the tunneling efficiency for programming. The fabricated devices sh...
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| Auteurs principaux: | , , , , , , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Elsevier
2022-07-01
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| Collection: | Results in Physics |
| Sujets: | |
| Accès en ligne: | http://www.sciencedirect.com/science/article/pii/S2211379722003321 |
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