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Investigation of switching mechanism in HfO(x)-ReRAM under low power and conventional operation modes
Low-power resistive random access memory (LP-ReRAM) devices have attracted increasing attention owing to their advantages of low operation power. In this study, a vertical-type LP-ReRAM consisting of TiN/Ti/HfO(2)/TiN structure was fabricated. The switching mechanism for LP-ReRAM was elucidated as t...
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| Izdano u: | Sci Rep |
|---|---|
| Glavni autori: | , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group
2016
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5175169/ https://ncbi.nlm.nih.gov/pubmed/28000741 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep39510 |
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