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Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature
III‐nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field‐effect transistor (FET). In this work, the dependence of the spin relaxation time on external st...
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| 出版年: | Adv Sci (Weinh) |
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| 主要な著者: | , , , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
John Wiley and Sons Inc.
2020
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7341096/ https://ncbi.nlm.nih.gov/pubmed/32670748 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201903400 |
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