Complementary Black Phosphorus Tunneling Field-Effect Transistors

Band-to-band tunneling field-effect transistors (TFETs)(1–7) have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) for low-power integration circuits and have been demonstrated to overcome the thermionic limit, that results intrinsi...

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Bibliografiske detaljer
Udgivet i:ACS Nano
Main Authors: Wu, Peng, Ameen, Tarek, Zhang, Huairuo, Bendersky, Leonid, Ilatikhameneh, Hesameddin, Klimeck, Gerhard, Rahman, Rajib, Davydov, Albert V., Appenzeller, Joerg
Format: Artigo
Sprog:Inglês
Udgivet: 2018
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC7292334/
https://ncbi.nlm.nih.gov/pubmed/30563322
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsnano.8b06441
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