Lanean...
Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors)....
Gorde:
| Argitaratua izan da: | Nat Commun |
|---|---|
| Egile Nagusiak: | , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Nature Pub. Group
2015
|
| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4660372/ https://ncbi.nlm.nih.gov/pubmed/26563458 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms9948 |
| Etiketak: |
Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|