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Complementary Black Phosphorus Tunneling Field-Effect Transistors
Band-to-band tunneling field-effect transistors (TFETs)(1–7) have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) for low-power integration circuits and have been demonstrated to overcome the thermionic limit, that results intrinsi...
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| Veröffentlicht in: | ACS Nano |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
2018
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7292334/ https://ncbi.nlm.nih.gov/pubmed/30563322 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsnano.8b06441 |
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