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Understanding contact gating in Schottky barrier transistors from 2D channels
In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the “conventional” model for SB-FETs with the phenomenon of contact gating – an effect that signif...
Sparad:
| I publikationen: | Sci Rep |
|---|---|
| Huvudupphovsmän: | , , , |
| Materialtyp: | Artigo |
| Språk: | Inglês |
| Publicerad: |
Nature Publishing Group UK
2017
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| Ämnen: | |
| Länkar: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5626721/ https://ncbi.nlm.nih.gov/pubmed/28974712 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-12816-3 |
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