Lataa...
Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO(2) Memory
In this study, molybdenum tungsten/amorphous InGaZnO (a-IGZO)/TiO(2)/n-type Si-based resistive random access memory (ReRAM) is manufactured. After deposition of the a-IGZO, annealing was performed at 200, 300, 400, and 500 °C for approximately 1 h in order to analyze the effect of temperature change...
Tallennettuna:
| Julkaisussa: | Sci Rep |
|---|---|
| Päätekijät: | , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group UK
2020
|
| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7283246/ https://ncbi.nlm.nih.gov/pubmed/32518357 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-66339-5 |
| Tagit: |
Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!
|