Loading...
The Effect of Multi-Layer Stacking Sequence of TiO(x) Active Layers on the Resistive-Switching Characteristics of Memristor Devices
The oxygen vacancies in the TiO(x) active layer play the key role in determining the electrical characteristics of TiO(x)–based memristors such as resistive-switching behaviour. In this paper, we investigated the effect of a multi-layer stacking sequence of TiO(x) active layers on the resistive-swit...
Na minha lista:
| Udgivet i: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2020
|
| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7074605/ https://ncbi.nlm.nih.gov/pubmed/32019257 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11020154 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|