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The Effect of Multi-Layer Stacking Sequence of TiO(x) Active Layers on the Resistive-Switching Characteristics of Memristor Devices
The oxygen vacancies in the TiO(x) active layer play the key role in determining the electrical characteristics of TiO(x)–based memristors such as resistive-switching behaviour. In this paper, we investigated the effect of a multi-layer stacking sequence of TiO(x) active layers on the resistive-swit...
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| Pubblicato in: | Micromachines (Basel) |
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| Autori principali: | , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2020
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7074605/ https://ncbi.nlm.nih.gov/pubmed/32019257 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11020154 |
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