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An electrical characterisation methodology for identifying the switching mechanism in TiO(2) memristive stacks
Resistive random access memories (RRAMs) can be programmed to discrete resistive levels on demand via voltage pulses with appropriate amplitude and widths. This tuneability enables the design of various emerging concepts, to name a few: neuromorphic applications and reconfigurable circuits. Despite...
Shranjeno v:
| izdano v: | Sci Rep |
|---|---|
| Main Authors: | , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group UK
2019
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| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6546741/ https://ncbi.nlm.nih.gov/pubmed/31160619 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-44607-3 |
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