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Stochastic switching of TiO(2)-based memristive devices with identical initial memory states
In this work, we show that identical TiO(2)-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the...
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| Autores principales: | , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4067684/ https://ncbi.nlm.nih.gov/pubmed/24994953 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-293 |
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