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Stochastic switching of TiO(2)-based memristive devices with identical initial memory states

In this work, we show that identical TiO(2)-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Li, Qingjiang, Khiat, Ali, Salaoru, Iulia, Xu, Hui, Prodromakis, Themistoklis
Format: Artigo
Sprache:Inglês
Veröffentlicht: Springer 2014
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4067684/
https://ncbi.nlm.nih.gov/pubmed/24994953
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-293
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