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Spatially resolved TiO(x) phases in switched RRAM devices using soft X-ray spectromicroscopy
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive phases within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of such conductive regions is a daunting task, particularly fo...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4759601/ https://ncbi.nlm.nih.gov/pubmed/26891776 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep21525 |
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