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An electrical characterisation methodology for identifying the switching mechanism in TiO(2) memristive stacks
Resistive random access memories (RRAMs) can be programmed to discrete resistive levels on demand via voltage pulses with appropriate amplitude and widths. This tuneability enables the design of various emerging concepts, to name a few: neuromorphic applications and reconfigurable circuits. Despite...
Guardat en:
| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6546741/ https://ncbi.nlm.nih.gov/pubmed/31160619 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-44607-3 |
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