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Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO(2) Memory
In this study, molybdenum tungsten/amorphous InGaZnO (a-IGZO)/TiO(2)/n-type Si-based resistive random access memory (ReRAM) is manufactured. After deposition of the a-IGZO, annealing was performed at 200, 300, 400, and 500 °C for approximately 1 h in order to analyze the effect of temperature change...
Enregistré dans:
| Publié dans: | Sci Rep |
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| Auteurs principaux: | , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Nature Publishing Group UK
2020
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7283246/ https://ncbi.nlm.nih.gov/pubmed/32518357 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-66339-5 |
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