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Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO(2) Memory

In this study, molybdenum tungsten/amorphous InGaZnO (a-IGZO)/TiO(2)/n-type Si-based resistive random access memory (ReRAM) is manufactured. After deposition of the a-IGZO, annealing was performed at 200, 300, 400, and 500 °C for approximately 1 h in order to analyze the effect of temperature change...

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Bibliografiska uppgifter
I publikationen:Sci Rep
Huvudupphovsmän: Heo, Kwan-Jun, Kim, Han-Sang, Lee, Jae-Yun, Kim, Sung-Jin
Materialtyp: Artigo
Språk:Inglês
Publicerad: Nature Publishing Group UK 2020
Ämnen:
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC7283246/
https://ncbi.nlm.nih.gov/pubmed/32518357
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-66339-5
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