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Doping Dependent Magnetic Behavior in MBE Grown GaAs(1-x)Sb(x) Nanowires
Intrinsic and Te-doped GaAsSb nanowires with diameters ~100–120 nm were grown on a p-type Si(111) substrate by molecular beam epitaxy (MBE). Detailed magnetic, current/voltage and low-energy electron energy loss spectroscopy measurements were performed to investigate the effect of Te-doping. While i...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7265495/ https://ncbi.nlm.nih.gov/pubmed/32488009 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-65805-4 |
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