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Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor
In this work, the measured electrical characteristics of a fully depleted silicon-on-insulator (FDSOI) device and fin-shaped field-effect transistor (FinFET), whose gate electrode is connected in series to the bottom electrode of a ferroelectric capacitor (FE-FDSOI/FE-FinFET), are experimentally stu...
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| Publicat a: | Nano Converg |
|---|---|
| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer Singapore
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7264088/ https://ncbi.nlm.nih.gov/pubmed/32483648 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s40580-020-00230-x |
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