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In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices

The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing t...

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Detalhes bibliográficos
Publicado no:Nanomaterials (Basel)
Main Authors: Mizuno, Naomi, Camino, Fernando, Du, Xu
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2020
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7221667/
https://ncbi.nlm.nih.gov/pubmed/32252373
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10040666
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