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Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO(x)N(y) MIS Gate
This study investigated the effects of a thin aluminum oxynitride (AlO(x)N(y)) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reductio...
Gorde:
| Argitaratua izan da: | Materials (Basel) |
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| Egile Nagusiak: | , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
MDPI
2020
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7177355/ https://ncbi.nlm.nih.gov/pubmed/32230767 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13071538 |
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