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Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining bottom AlGaN barrier under the gate...
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| Publicado no: | Micromachines (Basel) |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7074664/ https://ncbi.nlm.nih.gov/pubmed/32028702 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11020163 |
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