Kim, H., Kang, M., Kim, J. J., Seo, K., & Cha, H. (2020). Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO(x)N(y) MIS Gate. Materials (Basel).
Stile di citazione ChicagoKim, Hyun-Seop, Myoung-Jin Kang, Jeong Jin Kim, Kwang-Seok Seo, e Ho-Young Cha. "Effects of Recessed-Gate Structure On AlGaN/GaN-on-SiC MIS-HEMTs With Thin AlO(x)N(y) MIS Gate." Materials (Basel) 2020.
Citazione MLAKim, Hyun-Seop, et al. "Effects of Recessed-Gate Structure On AlGaN/GaN-on-SiC MIS-HEMTs With Thin AlO(x)N(y) MIS Gate." Materials (Basel) 2020.
Attenzione: Queste citazioni potrebbero non essere precise al 100%.