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Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN

The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metal-organic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements. It is found that there...

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Shranjeno v:
Bibliografske podrobnosti
izdano v:Nanoscale Res Lett
Main Authors: Zhang, Yuheng, Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Yang, Jing, Liu, Shuangtao
Format: Artigo
Jezik:Inglês
Izdano: Springer US 2020
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC7010866/
https://ncbi.nlm.nih.gov/pubmed/32040646
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-3263-9
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