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Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN
The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metal-organic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements. It is found that there...
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| Publicat a: | Nanoscale Res Lett |
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| Autors principals: | , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7010866/ https://ncbi.nlm.nih.gov/pubmed/32040646 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-3263-9 |
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