Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been investigated for decades, but its origin still remains controversial. In this study, ten u-GaN samples grown via metalorganic chemical vapor deposition (MOCVD) are investigated. It is observed from the roo...

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Detalhes bibliográficos
Publicado no:Nanomaterials (Basel)
Main Authors: Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Liu, Shuangtao, Xing, Yao, Zhang, Liqun, Li, Mo, Zhang, Yuantao, Du, Guotong
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2018
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6163992/
https://ncbi.nlm.nih.gov/pubmed/30235861
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8090744
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