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Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence

The InGaN/GaN multi-quantum wells (MQWs) are prepared at the same condition by metal-organic chemical vapor deposition (MOCVD) except the thickness of cap layers additionally grown on each InGaN well layer. The photoluminescence (PL) intensity of the thin cap layer sample is much stronger than that...

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Bibliografiske detaljer
Udgivet i:Nanoscale Res Lett
Main Authors: Xing, Yao, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Liang, Feng, Liu, Shuangtao, Zhang, Liqun
Format: Artigo
Sprog:Inglês
Udgivet: Springer US 2019
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6419640/
https://ncbi.nlm.nih.gov/pubmed/30874975
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2919-9
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