Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence

The InGaN/GaN multi-quantum wells (MQWs) are prepared at the same condition by metal-organic chemical vapor deposition (MOCVD) except the thickness of cap layers additionally grown on each InGaN well layer. The photoluminescence (PL) intensity of the thin cap layer sample is much stronger than that...

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Vydáno v:Nanoscale Res Lett
Hlavní autoři: Xing, Yao, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Liang, Feng, Liu, Shuangtao, Zhang, Liqun
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer US 2019
Témata:
Nano Express
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC6419640/
https://ncbi.nlm.nih.gov/pubmed/30874975
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2919-9
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