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Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation

The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈10(7) cm(2)/Vs) is experimentally examined as a function of incident microwave power at a fixed bath temperature. The experimental results indicate...

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Bibliografiska uppgifter
I publikationen:Sci Rep
Huvudupphovsmän: Samaraweera, R. L., Gunawardana, B., Nanayakkara, T. R., Munasinghe, R. C., Kriisa, A., Reichl, C., Wegscheider, W., Mani, R. G.
Materialtyp: Artigo
Språk:Inglês
Publicerad: Nature Publishing Group UK 2020
Ämnen:
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC6972946/
https://ncbi.nlm.nih.gov/pubmed/31964912
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-57331-9
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