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Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation
The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈10(7) cm(2)/Vs) is experimentally examined as a function of incident microwave power at a fixed bath temperature. The experimental results indicate...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group UK
2020
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6972946/ https://ncbi.nlm.nih.gov/pubmed/31964912 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-57331-9 |
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