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Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices

Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This stud...

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Detalhes bibliográficos
Main Authors: Mani, R. G., Kriisa, A., Wegscheider, W.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2013
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3782888/
https://ncbi.nlm.nih.gov/pubmed/24067264
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02747
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