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Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices
Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This stud...
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| Hauptverfasser: | , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group
2013
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3782888/ https://ncbi.nlm.nih.gov/pubmed/24067264 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep02747 |
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