Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Antzeko izenburuak

• AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
  nork: Wojtasiak, Wojciech, et al.
  Argitaratua: (2018)
• Improved On-Resistance Characteristics in P-GaN/AlGaN/GaN HEMTs via Sputtered Boron Nitride Dielectric Film
  nork: Jun-Hyeok Yim, et al.
  Argitaratua: (2025-01-01)
• High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
  nork: Lee, Ya-Ju, et al.
  Argitaratua: (2014)
• Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
  nork: Li, Liuan, et al.
  Argitaratua: (2014)
• Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors
  nork: Cui, Peng, et al.
  Argitaratua: (2018)