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Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD
We investigate low-temperature (<200 °C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p–n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower thermal budget and a better control of the doping...
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| Publicat a: | Materials (Basel) |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6887746/ https://ncbi.nlm.nih.gov/pubmed/31752297 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12223795 |
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