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Superconductivity in heavily boron-doped silicon carbide
The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can em...
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| Vydáno v: | Sci Technol Adv Mater |
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| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Taylor & Francis
2009
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5099636/ https://ncbi.nlm.nih.gov/pubmed/27878022 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/9/4/044205 |
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