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Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride
Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH(4) and N(2)O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rende...
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| Veröffentlicht in: | Beilstein J Nanotechnol |
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| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Beilstein-Institut
2018
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6009393/ https://ncbi.nlm.nih.gov/pubmed/29977683 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.9.141 |
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