Cargando...
The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
Carrier recombination and scattering at the semiconductor boundaries can substantially limit the device efficiency. However, surface and interface recombination is generally neglected in the nitride-based devices. Here, we study carrier recombination and diffusivity in AlGaN/GaN/sapphire heterointer...
Gardado en:
| Publicado en: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group UK
2019
|
| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6874540/ https://ncbi.nlm.nih.gov/pubmed/31757996 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-53732-y |
| Tags: |
Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|