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The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
Carrier recombination and scattering at the semiconductor boundaries can substantially limit the device efficiency. However, surface and interface recombination is generally neglected in the nitride-based devices. Here, we study carrier recombination and diffusivity in AlGaN/GaN/sapphire heterointer...
Shranjeno v:
| izdano v: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group UK
2019
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| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6874540/ https://ncbi.nlm.nih.gov/pubmed/31757996 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-53732-y |
| Oznake: |
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