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Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications

BACKGROUND: A novel temperature dependent amorphous nano oxide semiconductor (AOS) thin-film transistor (TFT) is reported here for the first time, which is vastly different from conventional behavior. In the literature, the threshold voltage of TFTs decreases with increasing temperature. Here, the t...

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Vydáno v:Int J Nanomedicine
Hlavní autoři: Huo, Changhe, Dai, Mingzhi, Hu, Yongbin, Zhang, Xingye, Wang, Weiliang, Zhang, Hengbo, Jiang, Kemin, Wang, Pengjun, Webster, Thomas J, Guo, Liqiang, Zhu, Wenqing
Médium: Artigo
Jazyk:Inglês
Vydáno: Dove 2019
Témata:
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC6842275/
https://ncbi.nlm.nih.gov/pubmed/31806964
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.2147/IJN.S208023
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