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Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications
BACKGROUND: A novel temperature dependent amorphous nano oxide semiconductor (AOS) thin-film transistor (TFT) is reported here for the first time, which is vastly different from conventional behavior. In the literature, the threshold voltage of TFTs decreases with increasing temperature. Here, the t...
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| Publicat a: | Int J Nanomedicine |
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| Autors principals: | , , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Dove
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6842275/ https://ncbi.nlm.nih.gov/pubmed/31806964 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.2147/IJN.S208023 |
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