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Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach
3C-SiC is a promising material for low-voltage power electronic devices but its growth is still challenging. Heteroepitaxy of 3C-SiC on Si micrometer-sized pillars is regarded as a viable method to achieve high crystalline quality, minimizing the effects of lattice and thermal expansion mismatch. Th...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6804293/ https://ncbi.nlm.nih.gov/pubmed/31581499 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12193223 |
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