Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors

We investigated the effect of simultaneous mechanical and electrical stress on the electrical characteristics of flexible indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs). The IGZO TFTs exhibited a threshold voltage shift (∆V(TH)) under an application of positive-bias-stress (PBS), with...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Materials (Basel)
Päätekijät: Seo, Youngjin, Jeong, Hwan-Seok, Jeong, Ha-Yun, Park, Shinyoung, Jang, Jun Tae, Choi, Sungju, Kim, Dong Myong, Choi, Sung-Jin, Jin, Xiaoshi, Kwon, Hyuck-In, Kim, Dae Hwan
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI 2019
Aiheet:
Communication
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC6803835/
https://ncbi.nlm.nih.gov/pubmed/31590279
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12193248
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