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Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications
The properties of Al-doped SnO(x) films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnO(x) thin-film transistors (TFTs) exhibit improved semiconductor characteristi...
Gardado en:
| Publicado en: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI
2019
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6337128/ https://ncbi.nlm.nih.gov/pubmed/30609829 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12010137 |
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