Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide

Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional δ-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal budget necessary to maintain th...

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Bibliografiske detaljer
Udgivet i:Phys Rev Appl
Main Authors: Schmucker, Scott W., Namboodiri, Pradeep N., Kashid, Ranjit, Wang, Xiqiao, Hu, Binhui, Wyrick, Jonathan E., Myers, Alline F., Schumacher, Joshua D., Silver, Richard M., Stewart, M. D.
Format: Artigo
Sprog:Inglês
Udgivet: 2019
Fag:
Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6774366/
https://ncbi.nlm.nih.gov/pubmed/31579257
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1103/PhysRevApplied.11.034071
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