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Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C
Low temperature Si epitaxy has become increasingly important due to its critical role in the encapsulation and performance of buried nanoscale dopant devices. We demonstrate epitaxial growth up to nominally 25 nm, at 250°C, with analysis at successive growth steps using STM and cross section TEM to...
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| Publicado no: | Appl Surf Sci |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4929620/ https://ncbi.nlm.nih.gov/pubmed/27397949 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.apsusc.2016.03.212 |
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