Φορτώνει......
Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C
Low temperature Si epitaxy has become increasingly important due to its critical role in the encapsulation and performance of buried nanoscale dopant devices. We demonstrate epitaxial growth up to nominally 25 nm, at 250°C, with analysis at successive growth steps using STM and cross section TEM to...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Appl Surf Sci |
|---|---|
| Κύριοι συγγραφείς: | , , , , , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
2016
|
| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4929620/ https://ncbi.nlm.nih.gov/pubmed/27397949 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.apsusc.2016.03.212 |
| Ετικέτες: |
Προσθήκη ετικέτας
Δεν υπάρχουν, Καταχωρήστε ετικέτα πρώτοι!
|