Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C

Por Deng, Xiao, Namboodiri, Pradeep, Li, Kai, Wang, Xiqiao, Stan, Gheorghe, Myers, Alline F., Cheng, Xinbin, Li, Tongbao, Silver, Richard M.
Publicado no Appl Surf Sci (2016)

Atomically Traceable Nanostructure Fabrication

Por Ballard, Josh B., Dick, Don D., McDonnell, Stephen J., Bischof, Maia, Fu, Joseph, Owen, James H. G., Owen, William R., Alexander, Justin D., Jaeger, David L., Namboodiri, Pradeep, Fuchs, Ehud, Chabal, Yves J., Wallace, Robert M., Reidy, Richard, Silver, Richard M., Randall, John N., Von Ehr, James
Publicado no J Vis Exp (2015)