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Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a two-step cooling process is taken. Through analyzing, we found that the formation of In QDs...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6702591/ https://ncbi.nlm.nih.gov/pubmed/31420760 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3095-7 |
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