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ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds...

詳細記述

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書誌詳細
出版年:Nanomaterials (Basel)
主要な著者: Kia, Alireza M., Haufe, Nora, Esmaeili, Sajjad, Mart, Clemens, Utriainen, Mikko, Puurunen, Riikka L., Weinreich, Wenke
フォーマット: Artigo
言語:Inglês
出版事項: MDPI 2019
主題:
オンライン・アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC6669757/
https://ncbi.nlm.nih.gov/pubmed/31331020
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9071035
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