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Toward Defect-Free Doping by Self-Assembled Molecular Monolayers: The Evolution of Interstitial Carbon-Related Defects in Phosphorus-Doped Silicon
[Image: see text] Self-assembled molecular monolayer (SAMM) doping on semiconductors has been widely appraised for its advantages of doping nanoelectronic devices for applications in the complementary metal-oxide-semiconductor transistor (CMOS) industry. However, defects introduced by SAMM-doping wi...
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| Publicado no: | ACS Omega |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Chemical Society
2019
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6648394/ https://ncbi.nlm.nih.gov/pubmed/31459568 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.8b03372 |
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